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| 1550 nm Laser in Coaxial Package with SM-Pigtail, Medium Power STM 81004X STM 81005X * * * * Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power * Hermetically sealed subcomponent, similar to TO 18 * SM Pigtail with optional flange Type STM 81004G STM 81004A STM 81005G STM 81005A Ordering Code Q62702-Pxxxx Q62702-Pxxxx Q62702-Pxxxx Q62702-Pxxxx Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flange Component with other connector types on request. Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Symbol Values Unit TC Tstg TS - 40 ... + 85 - 40 ... + 85 260 C C C Semiconductor Group 1 02.95 STM 81004X STM 81005X Maximum Ratings (cont'd) Parameter Laser Diode Direct forward current Radiant power CW Reverse voltage Monitor Diode Reverse voltage Characteristics All optical data refer to a coupled 10/125 m SM fiber, TC = 25 C. Parameter Laser Diode Optical output power Emission wavelength center of range e = 0.5 mW Spectral bandwidth e = 0.5 mW (RMS) Threshold current (- 40 ... + 85 C) Forward voltage e = 0.5 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/fall time Monitor Diode Dark Current, VR = 5 V, e = 0 Photocurrent, e = 0.5 mW e > 1.2 1510 ... 1590 <5 8 ... 60 < 1.5 < 40 20 ... 100 <8 <1 mW nm nm mA V W mW/A ns Symbol Values Unit Symbol Values Unit IF max e 120 2 2 mA mW V VR max VR max 10 V Ith VF eth rS tR, tF IR IP < 500 100 ... 1000 nA A Semiconductor Group 2 STM 81004X STM 81005X Laser Diode Radiant Power in Singlemode Fiber 1.2 Optical Power in MikroW 1 0.8 0.6 0.4 0.2 0 0 20 40 60 Forward Current in mA Relative Radiant Power e = f() 100 90 Relative Optical Power 80 70 60 50 40 30 20 10 0 1546 1548 1550 1552 1554 Wavelength in nm Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA) port = 0, VR = 5 V 100 90 Forward Current in mA 80 70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 Forward Voltage in V Dark Current in nA 1000 100 10 1 0.1 0.01 -50 0 50 100 Temperature in C Semiconductor Group 3 STM 81004X STM 81005X Package Outlines (Dimensions in mm) STM 81004X STM 81005X Semiconductor Group 4 |
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